Invention Grant
- Patent Title: Power semiconductor modules and method for producing them
- Patent Title (中): 功率半导体模块及其制造方法
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Application No.: US11705719Application Date: 2007-02-13
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Publication No.: US07683472B2Publication Date: 2010-03-23
- Inventor: Rainer Popp
- Applicant: Rainer Popp
- Applicant Address: DE Nürnberg
- Assignee: SEMIKRON Electronik GmbH & Co. KG
- Current Assignee: SEMIKRON Electronik GmbH & Co. KG
- Current Assignee Address: DE Nürnberg
- Agency: Cohen Pontani Lieberman & Pavane LLP
- Priority: DE102006006423 20060213
- Main IPC: H01L23/34
- IPC: H01L23/34

Abstract:
A power semiconductor module in a pressure contact embodiment and a method for producing such modules, for disposition on a cooling component. Load terminals of the modules are formed as metal molded bodies having at least one contact element, one flat portion, and contact feet emanating therefrom. Each flat portion is disposed parallel to, and spaced from, the surface of the substrate. The contact feet extend from the flat portion to the substrate. An elastic intermediate layer is disposed between adjacent load terminals, in the region of the respective flat portions, and the intermediate layer and load terminals form a stack.
Public/Granted literature
- US20070187817A1 Power semiconductor modules and method for producing them Public/Granted day:2007-08-16
Information query
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