Invention Grant
- Patent Title: Semiconductor device, fabrication method therefor, and film fabrication method
- Patent Title (中): 半导体器件及其制造方法以及膜制造方法
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Application No.: US11540034Application Date: 2006-09-28
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Publication No.: US07683473B2Publication Date: 2010-03-23
- Inventor: Junichi Kasai , Kouichi Meguro , Masanori Onodera
- Applicant: Junichi Kasai , Kouichi Meguro , Masanori Onodera
- Applicant Address: US CA Sunnyvale
- Assignee: Spansion LLC
- Current Assignee: Spansion LLC
- Current Assignee Address: US CA Sunnyvale
- Main IPC: H01L23/04
- IPC: H01L23/04 ; H01L21/30
Abstract:
The present invention provides a semiconductor device, a fabrication method therefor, and a film fabrication method, the semiconductor device including a first substrate (e.g., a semiconductor chip), an anisotropic conductive film that is provided on the first substrate and has a wiring pattern having at least a portion providing conduction through the anisotropic conductive film, and a second substrate (semiconductor chip) provided on the anisotropic conductive film and coupled to the first substrate via the portion providing conduction through the anisotropic conductive film. According to the present invention, it is possible to provide a semiconductor device, a fabrication method therefor, and a film fabrication method, by which production costs can be reduced in electrically coupling different positions in upper and lower substrates.
Public/Granted literature
- US20070105304A1 Semiconductor device, fabrication method therefor, and film fabrication method Public/Granted day:2007-05-10
Information query
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