Invention Grant
- Patent Title: Bottom electrode for memory device and method of forming the same
- Patent Title (中): 用于记忆装置的底电极及其形成方法
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Application No.: US12068317Application Date: 2008-02-05
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Publication No.: US07683481B2Publication Date: 2010-03-23
- Inventor: Jun Liu
- Applicant: Jun Liu
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
Contacts having use in an integrated circuit and exemplary methods of forming the contacts are disclosed. The methods involve forming a conductive cap over a metal plug. The invention can mitigate keyholes in the contacts by capping and encapsulating the conductive material used to form the contact. The exemplary cap may be made of a nitride material.
Public/Granted literature
- US20080197338A1 Bottom electrode for memory device and method of forming the same Public/Granted day:2008-08-21
Information query
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