A semiconductor device is provided having an insulating layer structure with a low dielectric constant and excellent barrier properties against copper. This semiconductor device has a copper wiring layer and includes at least one layered structure having a copper wiring line, an amorphous carbon film with a density of 2.4 g/cm3 or more, a porous silicon oxide insulating material layer, an amorphous carbon film with a density of 2.4 g/cm3 or more and a copper wiring line in that order.