Invention Grant
- Patent Title: Semiconductor device and fabricating method thereof
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US11849102Application Date: 2007-08-31
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Publication No.: US07683489B2Publication Date: 2010-03-23
- Inventor: Kyung Min Park , Jae Won Han
- Applicant: Kyung Min Park , Jae Won Han
- Applicant Address: KR Seoul
- Assignee: Dongbu Hitek Co., Ltd.
- Current Assignee: Dongbu Hitek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Saliwanchik, Lloyd & Saliwanchik
- Priority: KR10-2006-0083331 20060831
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
A semiconductor device and a fabricating method thereof are provided. A PMD layer and at least one IMD layer are formed on a semiconductor substrate. A through-electrode penetrates through the PMD layer and the IMD layer, and a connecting electrode connects to the through-electrode.
Public/Granted literature
- US20080054474A1 Semiconductor Device and Fabricating Method Thereof Public/Granted day:2008-03-06
Information query
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