Invention Grant
US07683490B2 Semiconductor integrated circuit and semiconductor device having multilayer interconnection 失效
具有多层互连的半导体集成电路和半导体器件

  • Patent Title: Semiconductor integrated circuit and semiconductor device having multilayer interconnection
  • Patent Title (中): 具有多层互连的半导体集成电路和半导体器件
  • Application No.: US11612840
    Application Date: 2006-12-19
  • Publication No.: US07683490B2
    Publication Date: 2010-03-23
  • Inventor: Junichi Sekine
  • Applicant: Junichi Sekine
  • Applicant Address: JP Tokyo
  • Assignee: Elpida Memory, Inc.
  • Current Assignee: Elpida Memory, Inc.
  • Current Assignee Address: JP Tokyo
  • Agency: Sughrue Mion, PLLC
  • Priority: JP2005-368635 20051221
  • Main IPC: H01L23/48
  • IPC: H01L23/48
Semiconductor integrated circuit and semiconductor device having multilayer interconnection
Abstract:
A semiconductor device includes: multi-layer interconnection substrate having signal distribution interconnection and power supply line; and semiconductor circuit blocks installed on the multi-layer interconnection substrate for performing required operations. The multi-layer substrate includes: a third interconnection layer having interconnections extending in a first direction; a second interconnection layer having interconnections extending in a second direction which is different to the first direction; and a first interconnection layer having interconnections extends in a direction orthogonal to the first direction.
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