Invention Grant
- Patent Title: Semiconductor device having a function of detection breakages on a periphery thereof
- Patent Title (中): 具有检测破坏功能的半导体装置
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Application No.: US11826186Application Date: 2007-07-12
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Publication No.: US07683627B2Publication Date: 2010-03-23
- Inventor: Masayuki Tsukuda
- Applicant: Masayuki Tsukuda
- Applicant Address: JP Kawasaki, Kanagawa
- Assignee: NEC Electronics Corporation
- Current Assignee: NEC Electronics Corporation
- Current Assignee Address: JP Kawasaki, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2006-193013 20060713
- Main IPC: G01R31/08
- IPC: G01R31/08

Abstract:
A resistance wiring and a judgement circuit for judging a potential in a middle of a path of the resistance wiring are provided on a periphery of a semiconductor chip. One end of the resistance wiring is connected to a power supply and the other end thereof is grounded. Connection points of the resistance wiring to the power supply and the ground are disposed at a corner on the periphery of the semiconductor chip, while a connection point of the resistance wiring to the judgement circuit is disposed at a corner diagonal to the corner on the periphery. When breakages such as chipping and peeling of an interlayer insulating film is caused on the periphery, resistance of the resistance wiring changes.
Public/Granted literature
- US20080012572A1 Semiconductor device having a function of detection breakages on a periphery thereof Public/Granted day:2008-01-17
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