The invention concerns a process and a circuit designed to improve the life duration of electronic field-effect integrated circuit transistors and in particular those with a thin film gate dielectric. According to the invention, an aging measurement tS is supplied by measuring the charge or discharge time at a reference voltage VREF of the gate of a field effect transistor T1, previously pre-charged to a predefined test voltage VP, and brought to high impedance. Depending on the aging measurement obtained, the operational voltage measurement conditions of the transistor can be maintained or modified to reduce the stress applied to the dielectric.