Invention Grant
- Patent Title: Techniques of ripple reduction for charge pumps
- Patent Title (中): 电荷泵波纹减少技术
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Application No.: US12146243Application Date: 2008-06-25
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Publication No.: US07683700B2Publication Date: 2010-03-23
- Inventor: Jonathan H. Huynh , Qui Vi Nguyen , Feng Pang
- Applicant: Jonathan H. Huynh , Qui Vi Nguyen , Feng Pang
- Applicant Address: US CA Milpitas
- Assignee: SanDisk Corporation
- Current Assignee: SanDisk Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Davis Wright Tremaine LLP
- Main IPC: G05F1/10
- IPC: G05F1/10

Abstract:
A charge pump system for supplying an output voltage to a load is described. It includes a regulation circuit connected to receive the output voltage and derive an enable signal from it and multiple charge pump circuits connected in parallel to supply the output voltage. Each of the charge pump circuits is also connected to receive a clock signal and the enable signal. The system also includes one or more delay circuit elements, where a corresponding one or more, but less than all, of the charge pump circuits are connectable to receive the enable signal delayed by the corresponding delay circuit element.
Public/Granted literature
- US20090322413A1 Techniques of Ripple Reduction for Charge Pumps Public/Granted day:2009-12-31
Information query
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