Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12068400Application Date: 2008-02-06
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Publication No.: US07683838B2Publication Date: 2010-03-23
- Inventor: Jun Koyama , Shunpei Yamazaki
- Applicant: Jun Koyama , Shunpei Yamazaki
- Applicant Address: unknown Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd
- Current Assignee Address: unknown Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2007-030858 20070209
- Main IPC: H01Q1/38
- IPC: H01Q1/38

Abstract:
An object is to provide a semiconductor device in which even in the case where a plurality of antennas are provided, there is no limitation on the layout of the antennas so that disconnection between an integrated circuit portion and the antenna and reduction in a communication distance from a communication device can be prevented. An integrated circuit portion which includes a thin film transistor is provided on a first surface of an insulating base. A first antenna is provided over the integrated circuit portion. A second antenna is provided over a second surface of the base. The first antenna is connected to the integrated circuit potion. The second antenna is connected to the integrated circuit portion through a through hole formed in the base. The first antenna and the second antenna overlap with the integrated circuit portion.
Public/Granted literature
- US20080191959A1 Semiconductor device Public/Granted day:2008-08-14
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