Invention Grant
- Patent Title: Solid-state image sensor
- Patent Title (中): 固态图像传感器
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Application No.: US11905133Application Date: 2007-09-27
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Publication No.: US07683954B2Publication Date: 2010-03-23
- Inventor: Michinori Ichikawa , Takanori Tanite , Tadashi Kawata
- Applicant: Michinori Ichikawa , Takanori Tanite , Tadashi Kawata
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: Brainvision Inc.,Stanley Electric Co., Ltd.
- Current Assignee: Brainvision Inc.,Stanley Electric Co., Ltd.
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP2006-268324 20060929
- Main IPC: H01L27/00
- IPC: H01L27/00 ; H04N3/14

Abstract:
A solid-state image sensor of a charge sorting method used in a time-of-flight measurement method, in which noise derived from background light, which is caused by the reflection light from the subject derived from background light is eliminated, reflection light from the subject derived from a predetermined light source, which is previously set in the solid-state image sensor, is effectively extracted as a signal component to achieve high sensitivity and low noise, which is a solid-state image sensor that is equipped with a plurality of charge-storage sections, discriminates photoelectrons generated by incoming light on the incoming timing and sort to the above-described plurality of charge-storage sections, and measures the timing of the incoming light, in which the sensor has: a plurality of capacitors that capable of conducting to the plurality of charge-storage sections; and a control section that controls a conducted state between the above-described plurality of charge-storage sections and the above-described plurality of capacitors, in which by selectively conducting the above-described plurality of charge-storage sections and the above-described plurality of capacitors by the control of the above-described control section, the difference component of charge stored in the above-described plurality of charge-storage sections is extracted.
Public/Granted literature
- US20080079833A1 Solid-state image sensor Public/Granted day:2008-04-03
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