Invention Grant
- Patent Title: Sensor device
- Patent Title (中): 传感器装置
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Application No.: US11596854Application Date: 2006-08-31
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Publication No.: US07684044B2Publication Date: 2010-03-23
- Inventor: Ryota Sekiguchi , Yoichiro Handa , Toshihiko Ouchi
- Applicant: Ryota Sekiguchi , Yoichiro Handa , Toshihiko Ouchi
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2005-256654 20050905
- International Application: PCT/JP2006/017697 WO 20060831
- International Announcement: WO2007/029758 WO 20070315
- Main IPC: G01N21/55
- IPC: G01N21/55
Abstract:
It has been requested to enhance sensitivity of a surface plasmon resonance sensor in a frequency region from a millimeter wave band to a terahertz band, from 30 GHz to 30 THz. Then, the present invention provides a sensor whose sensitivity is further improved by an analyte holding portion being equipped with a semiconductor and a medium.
Public/Granted literature
- US20080273207A1 Sensor Device Public/Granted day:2008-11-06
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