Invention Grant
- Patent Title: Magnetoelectronic devices based on colossal magnetoresistive thin films
- Patent Title (中): 基于巨磁阻薄膜的磁电子器件
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Application No.: US10582813Application Date: 2004-12-15
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Publication No.: US07684147B2Publication Date: 2010-03-23
- Inventor: Charles Ahn , Lior Klein , Yosef Basson , Xia Hong , Jeng-Bang Yau
- Applicant: Charles Ahn , Lior Klein , Yosef Basson , Xia Hong , Jeng-Bang Yau
- Agency: Carmody & Torrance LLP
- International Application: PCT/US2004/042200 WO 20041215
- International Announcement: WO2005/060657 WO 20050707
- Main IPC: G11B5/37
- IPC: G11B5/37 ; G11B5/127 ; H01L29/82
Abstract:
The present invention is directed to the use of perovskite manganite thin films and other magnetic films that exhibit both planar Hall effect and biaxial magnetic anisotropy to form the active area in magnetic sensor devices and in magnetic bit cells used in magnetoresistive random access memory (MRAM) devices. The manganite thin films of the invention are ferromagnetic manganites of the formula R1-xAxMnO3, wherein R is a rare-earth metal, A is an alkaline earth metal, and x is generally between about 0.15 and about 0.5.
Public/Granted literature
- US20070096228A1 Magnetoelectronic devices based on colossal magnetoresistive thin films Public/Granted day:2007-05-03
Information query
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