Invention Grant
US07684224B2 Structure comprising 3-dimensional integrated circuit architecture, circuit structure, and instructions for fabrication thereof 有权
包括三维集成电路架构,电路结构及其制造说明的结构

Structure comprising 3-dimensional integrated circuit architecture, circuit structure, and instructions for fabrication thereof
Abstract:
An integrated circuit design, structure and method for fabrication thereof includes at least one logic device layer and at least two additional separate memory array layers. Each of the logic device layer and the at least two memory array layers is independently optimized for a particular type of logic device or memory device disposed therein. Preferably also disposed within the logic device layer are array sense amplifiers, memory array output drivers and like higher performance circuitry otherwise generally disposed within memory array layer substrates. All layers may be independently powered to provide additional performance enhancement.
Information query
Patent Agency Ranking
0/0