Invention Grant
- Patent Title: Structure comprising 3-dimensional integrated circuit architecture, circuit structure, and instructions for fabrication thereof
- Patent Title (中): 包括三维集成电路架构,电路结构及其制造说明的结构
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Application No.: US11768210Application Date: 2007-06-26
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Publication No.: US07684224B2Publication Date: 2010-03-23
- Inventor: Kerry Bernstein , Paul William Coteus , Philip George Emma
- Applicant: Kerry Bernstein , Paul William Coteus , Philip George Emma
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Michael Lestrange, Esq.
- Main IPC: G11C5/02
- IPC: G11C5/02

Abstract:
An integrated circuit design, structure and method for fabrication thereof includes at least one logic device layer and at least two additional separate memory array layers. Each of the logic device layer and the at least two memory array layers is independently optimized for a particular type of logic device or memory device disposed therein. Preferably also disposed within the logic device layer are array sense amplifiers, memory array output drivers and like higher performance circuitry otherwise generally disposed within memory array layer substrates. All layers may be independently powered to provide additional performance enhancement.
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