Invention Grant
US07684230B2 Semiconductor memory device with a memory cell power supply circuit
有权
具有存储单元电源电路的半导体存储器件
- Patent Title: Semiconductor memory device with a memory cell power supply circuit
- Patent Title (中): 具有存储单元电源电路的半导体存储器件
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Application No.: US11476566Application Date: 2006-06-29
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Publication No.: US07684230B2Publication Date: 2010-03-23
- Inventor: Yoshinobu Yamagami , Hiroyuki Yamauchi
- Applicant: Yoshinobu Yamagami , Hiroyuki Yamauchi
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2005-194296 20050701
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00
Abstract:
A semiconductor memory device, including a memory cell including a flip-flop, and a memory cell power supply circuit for supplying a cell power supply voltage to the memory cell, wherein the memory cell power supply circuit supplies a cell power supply voltage in a first period and a different cell power supply voltage in a second period.
Public/Granted literature
- US20070002662A1 Semiconductor memory device Public/Granted day:2007-01-04
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