Invention Grant
- Patent Title: Phase change memory
- Patent Title (中): 相变记忆
-
Application No.: US12408420Application Date: 2009-03-20
-
Publication No.: US07684235B2Publication Date: 2010-03-23
- Inventor: Jun Liu
- Applicant: Jun Liu
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Leffert Jay & Polglaze, P.A.
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A PCRAM cell has a high resistivity bottom electrode cap to provide partial heating near the interface between the cell and the bottom electrode, preventing separation of the amorphous GST region from the bottom electrode, and reducing the programming current requirements.
Public/Granted literature
- US20090219751A1 PHASE CHANGE MEMORY Public/Granted day:2009-09-03
Information query
