Invention Grant
- Patent Title: Semiconductor device using magnetic domain wall movement
- Patent Title (中): 半导体器件采用磁畴壁运动
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Application No.: US11714823Application Date: 2007-03-07
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Publication No.: US07684236B2Publication Date: 2010-03-23
- Inventor: Chee-kheng Lim , Eun-sik Kim , Sung-chul Lee
- Applicant: Chee-kheng Lim , Eun-sik Kim , Sung-chul Lee
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2006-0065863 20060713
- Main IPC: G11C11/14
- IPC: G11C11/14
Abstract:
A semiconductor device to which magnetic domain wall movement is applied is provided. The semiconductor device includes a magnetic substance film in which magnetic domain walls are moved, and the magnetic substance film has a damping constant of 0.015 to 0.1.
Public/Granted literature
- US20080014424A1 Semiconductor device using magnetic domain wall movement Public/Granted day:2008-01-17
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