Invention Grant
- Patent Title: Non-volatile semiconductor memory device and its writing method
- Patent Title (中): 非易失性半导体存储器件及其写入方法
-
Application No.: US12211467Application Date: 2008-09-16
-
Publication No.: US07684251B2Publication Date: 2010-03-23
- Inventor: Kazuya Matsuzawa
- Applicant: Kazuya Matsuzawa
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-081126 20080326
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/06
Abstract:
It is made possible to provide a non-volatile semiconductor memory device capable of improving the writing efficiency and its writing method. Predetermined voltages are respectively applied to a drain region and a control gate, and then the voltage applied to the control gate is opened.
Public/Granted literature
- US20090244981A1 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND ITS WRITING METHOD Public/Granted day:2009-10-01
Information query
