Invention Grant
- Patent Title: Semiconductor apparatus
- Patent Title (中): 半导体装置
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Application No.: US11518427Application Date: 2006-09-11
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Publication No.: US07684261B2Publication Date: 2010-03-23
- Inventor: Tatsuya Matano
- Applicant: Tatsuya Matano
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2005-265346 20050913
- Main IPC: G11C16/06
- IPC: G11C16/06
Abstract:
In a semiconductor apparatus, a power supply voltage generating circuit (21) and an internal circuit (22) using a power supply voltage generated by the power supply voltage generating circuit are supplied with different internal circuit preset signals (PRESET 1 and PRESET 2) optimized for the power supply voltage generating circuit and the internal circuit, respectively.
Public/Granted literature
- US20070064513A1 Semiconductor apparatus Public/Granted day:2007-03-22
Information query
