Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
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Application No.: US11967582Application Date: 2007-12-31
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Publication No.: US07684269B2Publication Date: 2010-03-23
- Inventor: Khil-Ohk Kang
- Applicant: Khil-Ohk Kang
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor, Inc.
- Current Assignee: Hynix Semiconductor, Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Law Firm PLC
- Priority: KR10-2007-0063718 20070627
- Main IPC: G11C29/00
- IPC: G11C29/00

Abstract:
A semiconductor memory device is capable of measuring internal voltages via a shared pad to reduce a chip size. The semiconductor memory device includes a selector and a monitoring pad. The selector is configured to select one of a plurality of internal signals in response to a test signal and output the selected internal signal. The monitoring pad is configured to output an output signal of the selector to an outside of the semiconductor memory device.
Public/Granted literature
- US20090003088A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2009-01-01
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