Invention Grant
US07684271B2 High integrated open bit line structure semiconductor memory device with precharge units to reduce interference or noise
有权
高集成开放位线结构的半导体存储器件具有预充电单元，可减少干扰或噪声
- Patent Title: High integrated open bit line structure semiconductor memory device with precharge units to reduce interference or noise
- Patent Title (中): 高集成开放位线结构的半导体存储器件具有预充电单元，可减少干扰或噪声
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Application No.: US11583829Application Date: 2006-10-20
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Publication No.: US07684271B2Publication Date: 2010-03-23
- Inventor: Hyung-Sik Won
- Applicant: Hyung-Sik Won
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor, Inc.
- Current Assignee: Hynix Semiconductor, Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Law Firm PLC
- Priority: KR10-2005-0099156 20051020
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
A semiconductor memory device, having a 6F2 open bit line structure, connects each bit line of a bit line pair to a respective bit line of a neighboring bit line pair for a precharge operation so that a layout size of the semiconductor memory device decreases. Plural first precharge units each precharge one bit line of a first bit line pair and one bit line of a second bit line pair in response to a bit line equalizing signal. Plural sense amplifiers each sense a data bit supplied to a respective one of the first and second bit line pairs and amplify sensed data.
Public/Granted literature
- US20070091686A1 High integrated semiconductor memory device Public/Granted day:2007-04-26
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