Invention Grant
US07684277B2 Non-volatile memory device with controlled application of supply voltage
有权
具有受控应用电源电压的非易失性存储器件
- Patent Title: Non-volatile memory device with controlled application of supply voltage
- Patent Title (中): 具有受控应用电源电压的非易失性存储器件
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Application No.: US11613949Application Date: 2006-12-20
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Publication No.: US07684277B2Publication Date: 2010-03-23
- Inventor: Gunther Lehmann , Michael Diel , Mario Di Ronza
- Applicant: Gunther Lehmann , Michael Diel , Mario Di Ronza
- Applicant Address: DE Munich
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Munich
- Agency: Patterson & Sheridan, L.L.P.
- Priority: DE102005061719 20051222
- Main IPC: G11C5/14
- IPC: G11C5/14

Abstract:
Embodiments of the invention provide a memory device comprising a non-volatile memory element, a read-out circuit for reading out an item of memory information stored in the memory element, a switching unit, by means of which a supply voltage can be applied to the read-out circuit, and a control unit, which has the capability of controlling the switching unit in a manner dependent on the memory information stored in the memory element.
Public/Granted literature
- US20070165466A1 MEMORY DEVICE COMPRISING FUSE MEMORY ELEMENTS Public/Granted day:2007-07-19
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