Invention Grant
US07684279B2 Semiconductor memory device including distributed data input/output lines
有权
半导体存储器件包括分布式数据输入/输出线
- Patent Title: Semiconductor memory device including distributed data input/output lines
- Patent Title (中): 半导体存储器件包括分布式数据输入/输出线
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Application No.: US11819529Application Date: 2007-06-28
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Publication No.: US07684279B2Publication Date: 2010-03-23
- Inventor: Seong-young Seo
- Applicant: Seong-young Seo
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2006-0058878 20060628
- Main IPC: G11C8/00
- IPC: G11C8/00
Abstract:
A semiconductor memory device having a hierarchical input/output (I/O) line structure may include a plurality of core blocks, with each core block including a plurality of memory banks sharing an input/output sense amplifier. Data input/output lines may be arranged on each of the plurality of core blocks.
Public/Granted literature
- US20080043564A1 Semiconductor memory device including distributed data input/output lines Public/Granted day:2008-02-21
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