Invention Grant
- Patent Title: Photoresist edge bead removal measurement
- Patent Title (中): 光刻胶边缘珠去除测量
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Application No.: US11676140Application Date: 2007-02-16
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Publication No.: US07684611B2Publication Date: 2010-03-23
- Inventor: Patrick Simpkins
- Applicant: Patrick Simpkins
- Applicant Address: US NJ Flanders
- Assignee: Rudolph Technologies, Inc.
- Current Assignee: Rudolph Technologies, Inc.
- Current Assignee Address: US NJ Flanders
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: G06K9/00
- IPC: G06K9/00 ; G01R31/26 ; A61N5/00 ; G01B7/00
Abstract:
An edge bead removal measurement method includes determining an edge of a wafer about a circumference of the wafer. A location of a wafer notch on the edge of the wafer is determined. A location of a center of the wafer is determined. A distance from the edge of the wafer to an edge bead removal line about the circumference of the wafer is determined.
Public/Granted literature
- US20080002877A1 PHOTORESIST EDGE BEAD REMOVAL MEASUREMENT Public/Granted day:2008-01-03
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