Invention Grant
US07686886B2 Controlled shape semiconductor layer by selective epitaxy under seed structure
失效
在种子结构下通过选择性外延控制形状半导体层
- Patent Title: Controlled shape semiconductor layer by selective epitaxy under seed structure
- Patent Title (中): 在种子结构下通过选择性外延控制形状半导体层
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Application No.: US11535122Application Date: 2006-09-26
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Publication No.: US07686886B2Publication Date: 2010-03-30
- Inventor: Walter H Riess , Heike E Riel , Siegfried F Karg , Heinz Schmid
- Applicant: Walter H Riess , Heike E Riel , Siegfried F Karg , Heinz Schmid
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Eustus D. Nelson; Stephen C. Kaufman; Daryl K. Neff
- Main IPC: C30B25/00
- IPC: C30B25/00
Abstract:
A method for forming a structure of a desired cross-section on a substrate is provided. The method provides a seed structure comprising at least one support layer on the substrate. The support layer has a geometric shape related to the desired cross-section of the structure and is diffusive to a precursor constituent. The method further includes growing the structure by supplying at least one precursor constituent on the substrate. The desired cross-section of the structure is defined by the geometric shape of at least one support layer.
Public/Granted literature
- US20080072816A1 CRYSTALLINE STRUCTURE AND METHOD OF FABRICATION THEREOF Public/Granted day:2008-03-27
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