Invention Grant
US07686917B2 Plasma processing system and apparatus and a sample processing method
有权
等离子体处理系统和设备及样品处理方法
- Patent Title: Plasma processing system and apparatus and a sample processing method
- Patent Title (中): 等离子体处理系统和设备及样品处理方法
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Application No.: US11780014Application Date: 2007-07-19
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Publication No.: US07686917B2Publication Date: 2010-03-30
- Inventor: Toshio Masuda , Tatehito Usui , Mitsuru Suehiro , Hiroshi Kanekiyo , Hideyuki Yamamoto , Kazue Takahashi , Hiromichi Enami
- Applicant: Toshio Masuda , Tatehito Usui , Mitsuru Suehiro , Hiroshi Kanekiyo , Hideyuki Yamamoto , Kazue Takahashi , Hiromichi Enami
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2000-048933 20000221
- Main IPC: H01L21/00
- IPC: H01L21/00 ; C23C16/00 ; C23C14/00

Abstract:
A plasma processing apparatus includes a vacuum vessel with a sample stage having a mounting surface disposed in a process chamber, and a plate having substantially uniform thickness and electric power applied thereto constituting a ceiling of the chamber. The plate is disposed opposite to and substantially parallel with the sample stage so as to cover the whole area of the stage mounting surface and has a through-hole therein. An optical transmitter with a diameter larger than a diameter of the though-hole is disposed inside of the vacuum vessel and has an end face at a position above and spaced a small distance a back surface of the plate so as to receive light from the chamber via the through-hole. The optical transmitter is independently detachable with respect to the back surface of the plate.
Public/Granted literature
- US20080011422A1 Plasma Processing System And Apparatus And A Sample Processing Method Public/Granted day:2008-01-17
Information query
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