Invention Grant
- Patent Title: Silicon alloy coating of insulated wire
- Patent Title (中): 绝缘电线硅合金涂层
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Application No.: US11418271Application Date: 2006-05-04
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Publication No.: US07686925B2Publication Date: 2010-03-30
- Inventor: Samuel C. Sutton , Michael W. Mills , Craig R. Wilkinson
- Applicant: Samuel C. Sutton , Michael W. Mills , Craig R. Wilkinson
- Applicant Address: US CA Los Angeles
- Assignee: Northrop Grumman Corporation
- Current Assignee: Northrop Grumman Corporation
- Current Assignee Address: US CA Los Angeles
- Agency: Carmen Patti Law Group, LLC
- Main IPC: C23C14/34
- IPC: C23C14/34

Abstract:
Method and apparatus for sputter coating an insulated wire with a silicon and metal alloy, to provide the wire with sufficient surface conductivity to protect against build-up of electrostatic charge. A sputtering target of silicon has a metal plate positioned close enough to the sputtering site on the target to permit metal atoms to be dislodged by sputtered silicon, and deposited with the silicon to form an alloy. In the disclosed form of the invention, the wire is insulated with a polyimide material and the metal alloyed with silicon in the sputtered coating is stainless steel.
Public/Granted literature
- US20070256928A1 Silicon alloy coating of insulated wire Public/Granted day:2007-11-08
Information query
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