Invention Grant
- Patent Title: Method for manufacturing optical semiconductor device
- Patent Title (中): 光半导体器件的制造方法
-
Application No.: US12023177Application Date: 2008-01-31
-
Publication No.: US07687295B2Publication Date: 2010-03-30
- Inventor: Ryu Washino , Susumu Sorimachi , Daisuke Nakai , Kaoru Okamoto , Shigenori Hayakawa
- Applicant: Ryu Washino , Susumu Sorimachi , Daisuke Nakai , Kaoru Okamoto , Shigenori Hayakawa
- Applicant Address: JP
- Assignee: Opnext Japan, Inc.
- Current Assignee: Opnext Japan, Inc.
- Current Assignee Address: JP
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2007-047352 20070227; JP2007-133059 20070518
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/26

Abstract:
In an optical semiconductor device that emits or receives light substantially perpendicularly to or in parallel to an active surface formed on a semiconductor substrate, the optical semiconductor device, an electrode that is formed on the active surface side and connected to the active surface is stepped or tapered at an end of the electrode. The electrode of the optical semiconductor device is formed of three layers including an adhesive layer, a diffusion prevention layer, and an Au layer, and the stepped configuration or the taped configuration is formed by a difference of the thickness of the Au layer or the thickness of the adhesive layer/diffusion prevention layer/Au layer.
Public/Granted literature
- US20080203404A1 OPTICAL SEMICONDUCTOR DEVICE Public/Granted day:2008-08-28
Information query
IPC分类: