Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US10917441Application Date: 2004-08-13
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Publication No.: US07687325B2Publication Date: 2010-03-30
- Inventor: Shunpei Yamazaki , Jun Koyama
- Applicant: Shunpei Yamazaki , Jun Koyama
- Applicant Address: JP Kanagawa-Ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-Ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2000-069519 20000313
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high.By performing the formation of the pixel electrode 119, the source region 115 and the drain region 116 by using three photomasks in three photolithography steps, a liquid crystal display device prepared with a pixel TFT portion, having a reverse stagger type n-channel TFT, and a storage capacitor can be realized.
Public/Granted literature
- US20050221542A1 Semiconductor device and manufacturing method thereof Public/Granted day:2005-10-06
Information query
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