Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11292365Application Date: 2005-12-02
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Publication No.: US07687326B2Publication Date: 2010-03-30
- Inventor: Masafumi Morisue , Shinji Maekawa
- Applicant: Masafumi Morisue , Shinji Maekawa
- Applicant Address: JP Kanagawa-Ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-Ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2004-366430 20041217
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84

Abstract:
An object of the invention is to provide a semiconductor device and a display device which can be manufactured with improved material efficiency through a simplified manufacturing process, and a manufacturing method thereof. Another object is to provide a technique capable of forming a pattern such as a wiring included in the semiconductor device or display device in a desired shape with good controllability. One feature of a method for manufacturing a semiconductor device is to comprise the steps of forming a layer having a rough surface, forming a region having low wettability by a composition containing a conductive material and a region having high wettability by the composition over the rough surface, and forming a conductive material using the composition in the region having high wettability. Since regions having largely different wettability (regions having a large difference in wettability) can be formed, a liquid conductive or insulating material is attached only to a formation region with precision. Accordingly, a conductive or insulating layer can be precisely formed in a desired pattern.
Public/Granted literature
- US20060166411A1 Semiconductor device and manufacturing method thereof Public/Granted day:2006-07-27
Information query
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