Invention Grant
- Patent Title: Gettering of silicon on insulator using relaxed silicon germanium epitaxial proximity layers
- Patent Title (中): 使用松散的硅锗外延接近层吸收绝缘体上的硅
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Application No.: US11460391Application Date: 2006-07-27
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Publication No.: US07687329B2Publication Date: 2010-03-30
- Inventor: Leonard Forbes
- Applicant: Leonard Forbes
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L21/84
- IPC: H01L21/84
Abstract:
One aspect of this disclosure relates to a method for creating proximity gettering sites in a silicon on insulator (SOI) wafer. In various embodiments of this method, a relaxed silicon germanium region is formed over an insulator region of the SOI to be proximate to a device region. The relaxed silicon germanium region generates defects to getter impurities from the device region. Other aspects are provided herein.
Public/Granted literature
- US20060258063A1 GETTERING OF SILICON ON INSULATOR USING RELAXED SILICON GERMANIUM EPITAXIAL PROXIMITY LAYERS Public/Granted day:2006-11-16
Information query
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