Storage capacitor, a memory device and a method of manufacturing the same

Invention Grant

US07687343B2 Storage capacitor, a memory device and a method of manufacturing the same 有权

Title translation: 存储电容器，存储器件及其制造方法

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Patent Title: Storage capacitor, a memory device and a method of manufacturing the same
Patent Title (中): 存储电容器，存储器件及其制造方法
Application No.: US11633090

Application Date: 2006-12-04
Publication No.: US07687343B2

Publication Date: 2010-03-30
Inventor: Peter Moll , Peter Baars , Till Schloesser , Rolf Weis , Klaus Muemmler
Applicant: Peter Moll , Peter Baars , Till Schloesser , Rolf Weis , Klaus Muemmler
Applicant Address: DE Munich
Assignee: Qimonda AG
Current Assignee: Qimonda AG
Current Assignee Address: DE Munich
Agency: Edell, Shapiro & Finnan, LLC
Main IPC: H01L21/8242
IPC: H01L21/8242

Storage capacitor, a memory device and a method of manufacturing the same

Abstract:

A storage capacitor includes a first capacitor portion and a second capacitor portion, the second capacitor portion being disposed above the first capacitor portion, thereby defining a first direction. The first and the second portions each include a hollow body made of a conductive material, respectively, thereby forming a first capacitor electrode. An upper diameter of each of the hollow bodies is larger than a lower diameter of the hollow body, the diameter being measured perpendicularly with respect to the first direction. The storage capacitor also includes a second capacitor electrode and a dielectric material disposed between the first and the second capacitor electrodes. The storage capacitor also includes an insulating material disposed outside the hollow bodies, and a layer of an insulating material. A lower side of the insulating layer is disposed at a height of an upper side of the first capacitor portion.

Abstract(Chinese):

存储电容器包括第一电容器部分和第二电容器部分，第二电容器部分设置在第一电容器部分上方，从而限定第一方向。第一和第二部分分别包括由导电材料制成的中空体，从而形成第一电容器电极。每个中空体的上直径大于中空体的下直径，其直径相对于第一方向垂直地被测量。存储电容器还包括设置在第一和第二电容器电极之间的第二电容器电极和介电材料。存储电容器还包括设置在中空体外部的绝缘材料和绝缘材料层。绝缘层的下侧设置在第一电容器部分的上侧的高度处。

Public/Granted literature

US20080128773A1 Storage capacitor, a memory device and a method of manufacturing the same Public/Granted day:2008-06-05

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8239	........存储器结构
H01L21/8242	.........动态随机存取存储结构（DRAM）