Invention Grant
US07687379B2 Method of manufacturing In(As)Sb semiconductor on lattice-mismatched substrate and semiconductor device using the same
有权
在晶格失配衬底上制造In（As）Sb半导体的方法和使用其的半导体器件
- Patent Title: Method of manufacturing In(As)Sb semiconductor on lattice-mismatched substrate and semiconductor device using the same
- Patent Title (中): 在晶格失配衬底上制造In（As）Sb半导体的方法和使用其的半导体器件
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Application No.: US11966580Application Date: 2007-12-28
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Publication No.: US07687379B2Publication Date: 2010-03-30
- Inventor: Jin-Dong Song , Ju-Young Lim , Joonyeon Chang , Won Jun Choi
- Applicant: Jin-Dong Song , Ju-Young Lim , Joonyeon Chang , Won Jun Choi
- Applicant Address: KR Seoul
- Assignee: Korea Institute of Science and Technology
- Current Assignee: Korea Institute of Science and Technology
- Current Assignee Address: KR Seoul
- Agency: Browdy and Neimark, PLLC
- Priority: KR10-2007-0106577 20071023
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36 ; H01L31/00 ; H01L31/20
Abstract:
Disclosed is a method of manufacturing a semiconductor device whereby InAs(1-x)Sbx semiconductor layer is formed on an easily available and economical semiconductor substrate such as a GaAs substrate or a Si substrate. According to the method, a quantum dot layer is formed between a semiconductor substrate and a semiconductor layer to reduce defects caused by lattice mismatch between the semiconductor layer and the semiconductor layer. The method may improve the growth speed of the semiconductor layer. In addition, because the InSb layer provided by the present invention has an electron mobility greater at room temperature, it may improve the quality and productivity of the semiconductor device.
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