Polishing composition and rinse composition

Invention Grant

US07687393B2 Polishing composition and rinse composition 失效

Title translation: 抛光组合物和漂洗组合物

Please log in to see more content

Patent Title: Polishing composition and rinse composition
Patent Title (中): 抛光组合物和漂洗组合物
Application No.: US11740034

Application Date: 2007-04-25
Publication No.: US07687393B2

Publication Date: 2010-03-30
Inventor: Shoji Iwasa
Applicant: Shoji Iwasa
Applicant Address: JP Aichi
Assignee: Fujimi Incorporated
Current Assignee: Fujimi Incorporated
Current Assignee Address: JP Aichi
Agency: Vidas, Arrett & Steinkraus, P.A.
Priority: JP2002-287979 20020930
Main IPC: H01L21/4763
IPC: H01L21/4763

Polishing composition and rinse composition

Abstract:

A polishing composition for reducing the haze level of the surface of silicon wafers contains hydroxyethyl cellulose, polyethylene oxide, an alkaline compound, water, and silicon dioxide.

Abstract(Chinese):

用于降低硅片表面雾度的抛光组合物含有羟乙基纤维素，聚环氧乙烷，碱性化合物，水和二氧化硅。

Public/Granted literature

US20070186486A1 POLISHING COMPOSITION AND RINSE COMPOSITION Public/Granted day:2007-08-16

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）