Invention Grant
US07687397B2 Front-end processed wafer having through-chip connections 有权
前端处理晶片具有通芯片连接

  • Patent Title: Front-end processed wafer having through-chip connections
  • Patent Title (中): 前端处理晶片具有通芯片连接
  • Application No.: US11696799
    Application Date: 2007-04-05
  • Publication No.: US07687397B2
    Publication Date: 2010-03-30
  • Inventor: John Trezza
  • Applicant: John Trezza
  • Main IPC: H01L21/302
  • IPC: H01L21/302
Front-end processed wafer having through-chip connections
Abstract:
A method involves forming vias in a device-bearing semiconductor wafer, making at least some of the vias in the device-bearing semiconductor wafer electrically conductive, and performing back-end processing the device-bearing semiconductor wafer so as to create electrical connections between an electrically conductive via and a metallization layer. An alternative method involves forming vias in a device-bearing semiconductor wafer, making at least some of the vias in the device-bearing semiconductor wafer electrically conductive, and processing the device-bearing semiconductor wafer so as to create electrical connections between an electrically conductive via and a conductive semiconductor layer.
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