Invention Grant
- Patent Title: Front-end processed wafer having through-chip connections
- Patent Title (中): 前端处理晶片具有通芯片连接
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Application No.: US11696799Application Date: 2007-04-05
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Publication No.: US07687397B2Publication Date: 2010-03-30
- Inventor: John Trezza
- Applicant: John Trezza
- Main IPC: H01L21/302
- IPC: H01L21/302

Abstract:
A method involves forming vias in a device-bearing semiconductor wafer, making at least some of the vias in the device-bearing semiconductor wafer electrically conductive, and performing back-end processing the device-bearing semiconductor wafer so as to create electrical connections between an electrically conductive via and a metallization layer. An alternative method involves forming vias in a device-bearing semiconductor wafer, making at least some of the vias in the device-bearing semiconductor wafer electrically conductive, and processing the device-bearing semiconductor wafer so as to create electrical connections between an electrically conductive via and a conductive semiconductor layer.
Public/Granted literature
- US20070281466A1 FRONT-END PROCESSED WAFER HAVING THROUGH-CHIP CONNECTIONS Public/Granted day:2007-12-06
Information query
IPC分类: