Invention Grant
- Patent Title: Infrared ray sensing element and method of producing the same
- Patent Title (中): 红外线传感元件及其制造方法
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Application No.: US11598196Application Date: 2006-11-13
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Publication No.: US07687774B2Publication Date: 2010-03-30
- Inventor: Yoshimi Ohta , Masaki Hirota
- Applicant: Yoshimi Ohta , Masaki Hirota
- Applicant Address: JP Yokohama-shi
- Assignee: Nissan Motor Co., Ltd.
- Current Assignee: Nissan Motor Co., Ltd.
- Current Assignee Address: JP Yokohama-shi
- Agency: Foley & Lardner LLP
- Priority: JP2005-330371 20051115
- Main IPC: G01J5/02
- IPC: G01J5/02

Abstract:
An infrared ray sensing element, includes: 1) a semiconductor substrate; 2) an infrared ray receiver disposed above the semiconductor substrate in such a manner as to be isolated from the semiconductor substrate, the infrared ray receiver being configured to receive an infrared ray; and 3) a beam configured to support the infrared ray receiver to the semiconductor substrate and include a thermopile configured to sense a temperature increase of the infrared ray receiver, wherein one of the following has a cross sectional shape that includes at least one protruding part: i) the beam, and ii) the thermopile.
Public/Granted literature
- US20070114416A1 Infrared ray sensing element and method of producing the same Public/Granted day:2007-05-24
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