Invention Grant
- Patent Title: Semiconductor device and method for manufacturing semiconductor device
- Patent Title (中): 半导体装置及半导体装置的制造方法
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Application No.: US11448721Application Date: 2006-06-08
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Publication No.: US07687803B2Publication Date: 2010-03-30
- Inventor: Naohiro Takagi , Yasuhiro Suzuki , Kazuaki Satou
- Applicant: Naohiro Takagi , Yasuhiro Suzuki , Kazuaki Satou
- Applicant Address: JP Kanagawa
- Assignee: NEC Electronics Corporation
- Current Assignee: NEC Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Sughrue Mion, PLLC
- Priority: JP2005-169936 20050609
- Main IPC: H01L23/58
- IPC: H01L23/58

Abstract:
A semiconductor device includes a semiconductor chip and a wiring substrate. The wiring substrate is configured to be electrically connected to the semiconductor chip, and have a plurality of terminals arranged on an surface opposite to a surface on which the semiconductor chip is mounted. The plurality of terminals includes a plurality of first terminals configured to be arranged closely to each other, and a plurality of second terminals configured to be arranged so as to surround the plurality of first terminals. The plurality of second terminals is provided such that terminals of the semiconductor chip are connected to outer terminals through the plurality of second terminals. Each of the plurality of first terminals is not provided with a metal ball, while each of the plurality of second terminals is provided with a metal ball.
Public/Granted literature
- US20060279315A1 Semiconductor device and method for manufacturing semiconductor device Public/Granted day:2006-12-14
Information query
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