A semiconductor device includes one or more LDMOS transistors and one of more SCR-LDMOS transistors. Each LDMOS transistor includes a LDMOS well of a first conductivity type, a LDMOS source region of a second conductivity type formed in the LDMOS well, and a LDMOS drain region of a second conductivity type separated from the LDMOS well by a LDMOS drift region of the second conductivity type. Each SCR-LDMOS transistor comprising a SCR-LDMOS well of the first conductivity type, a SCR-LDMOS source region of the second conductivity type formed in the SCR-LDMOS well, a SCR-LDMOS drain region of a second conductivity type, and a anode region of the first conductivity type between the SCR-LDMOS drain region and the SCR-LDMOS drift region. The anode region is separated from the SCR-LDMOS well by a SCR-LDMOS drift region of the second conductivity type.