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US07687854B2 Transistor in a semiconductor substrate having high-concentration source and drain region formed at the bottom of a trench adjacent to the gate electrode 有权
在与栅电极相邻的沟槽的底部形成有高浓度源极和漏极区域的半导体衬底中的晶体管

  • Patent Title: Transistor in a semiconductor substrate having high-concentration source and drain region formed at the bottom of a trench adjacent to the gate electrode
  • Patent Title (中): 在与栅电极相邻的沟槽的底部形成有高浓度源极和漏极区域的半导体衬底中的晶体管
  • Application No.: US10876729
    Application Date: 2004-06-28
  • Publication No.: US07687854B2
    Publication Date: 2010-03-30
  • Inventor: Nam Kyu Park
  • Applicant: Nam Kyu Park
  • Applicant Address: KR Cheongju-Si, Chungcheongbuk-Do
  • Assignee: Magnachip Semiconductor, Ltd.
  • Current Assignee: Magnachip Semiconductor, Ltd.
  • Current Assignee Address: KR Cheongju-Si, Chungcheongbuk-Do
  • Agency: Lowe Hauptman Ham & Berner, LLP
  • Priority: KR10-2003-0057120 20030819
  • Main IPC: H01L29/78
  • IPC: H01L29/78 ;  H01L21/336
Transistor in a semiconductor substrate having high-concentration source and drain region formed at the bottom of a trench adjacent to the gate electrode
Abstract:
The present invention relates to a transistor in a semiconductor device and method of manufacturing the same. Trenches are formed in a semiconductor substrate at gate edges. Low-concentration impurity regions are then formed at the sidewalls and the bottoms of the trenches. High-concentration impurity regions are formed at the bottoms of the trenches in a depth shallower than the low-concentration impurity regions. Source/drain consisting of the low-concentration impurity regions and the high-concentration impurity regions are thus formed. Therefore, the size of the transistor can be reduced while securing a stabilized operating characteristic even at high voltage. It is thus possible to improve reliability of the circuit and the degree of integration in the device.
Abstract(Chinese):

本发明涉及一种半导体器件中的晶体管及其制造方法。 沟槽在栅极边缘处形成在半导体衬底中。 然后在沟槽的侧壁和底部形成低浓度杂质区。 在深度比低浓度杂质区浅的深度，在沟槽底部形成高浓度杂质区。 由此形成由低浓度杂质区域和高浓度杂质区域构成的源极/漏极。 因此，即使在高电压下也能够确保稳定的工作特性，可以减小晶体管的尺寸。 因此，可以提高电路的可靠性和装置的集成度。

Public/Granted literature
Information query
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IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66 .按半导体器件的类型区分的
H01L29/68 ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76 ...单极器件
H01L29/772 ....场效应晶体管
H01L29/78 .....由绝缘栅产生场效应的
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