Invention Grant
- Patent Title: Body bias to facilitate transistor matching
- Patent Title (中): 器件偏置，便于晶体管匹配
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Application No.: US11746887Application Date: 2007-05-10
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Publication No.: US07687856B2Publication Date: 2010-03-30
- Inventor: Henry Litzmann Edwards , Tathagata Chatterjee , Mohamed Kamel Mahmoud , Xiaoju Wu
- Applicant: Henry Litzmann Edwards , Tathagata Chatterjee , Mohamed Kamel Mahmoud , Xiaoju Wu
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Warren L. Franz; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L29/02
- IPC: H01L29/02 ; H01L29/04
Abstract:
One embodiment of the present invention relates to a method for transistor matching. In this method, a channel is formed within a first transistor by applying a gate-source bias having a first polarity to the first transistor. The magnitude of a potential barrier in a pocket implant region of the first transistor is reduced by applying a body-source bias having the first polarity to the first transistor. Current flow is facilitated across the channel by applying a drain-source bias having the first polarity to the first transistor. Other methods and circuits are also disclosed.
Public/Granted literature
- US20080277731A1 BODY BIAS TO FACILITATE TRANSISTOR MATCHING Public/Granted day:2008-11-13
Information query
IPC分类:
