Invention Grant
- Patent Title: Electronic circuit and method of manufacturing an electronic circuit
- Patent Title (中): 电子电路及其制造方法
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Application No.: US11852068Application Date: 2007-09-07
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Publication No.: US07687859B2Publication Date: 2010-03-30
- Inventor: Christian Russ , David Trémouilles , Steven Thijs
- Applicant: Christian Russ , David Trémouilles , Steven Thijs
- Applicant Address: DE Neubiberg BE Leuven
- Assignee: Infineon Technologies AG,IMEC VZW.
- Current Assignee: Infineon Technologies AG,IMEC VZW.
- Current Assignee Address: DE Neubiberg BE Leuven
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/62
- IPC: H01L23/62
Abstract:
An electronic circuit includes at least one field effect transistor that is to be protected against electrostatic discharge events, and at least one protection field effect transistor. The protection field effect transistor has a crystal orientation that is different from a crystal orientation of the field effect transistor to be protected.
Public/Granted literature
- US20090065868A1 Electronic Circuit and Method of Manufacturing an Electronic Circuit Public/Granted day:2009-03-12
Information query
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