A semiconductor device includes a semiconductor layer formed partially on a semiconductor substrate by epitaxial growth, an embedded oxide film embedded between the semiconductor substrate and the semiconductor layer, first and second gate electrodes disposed on sidewalls of the semiconductor layer, a source layer formed in the semiconductor layer and disposed in the first gate electrode, and a drain layer formed in the semiconductor layer and disposed in the second gate electrode, wherein the sidewalls of the semiconductor layer are film-forming surfaces of the epitaxial growth.