Invention Grant
US07687891B2 Diode having one or more zones of a first conductivity type and one or more zones of a second conductivity type each located within a layer of the second conductivity type
有权
二极管具有一个或多个第一导电类型的区域和一个或多个第二导电类型的区域，每个区域都位于第二导电类型的层内
- Patent Title: Diode having one or more zones of a first conductivity type and one or more zones of a second conductivity type each located within a layer of the second conductivity type
- Patent Title (中): 二极管具有一个或多个第一导电类型的区域和一个或多个第二导电类型的区域，每个区域都位于第二导电类型的层内
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Application No.: US11748050Application Date: 2007-05-14
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Publication No.: US07687891B2Publication Date: 2010-03-30
- Inventor: Hans-Joachim Schulze , Hans-Peter Felsl
- Applicant: Hans-Joachim Schulze , Hans-Peter Felsl
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Coats & Bennett, P.L.L.C.
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/861
Abstract:
A semiconductor device includes a first layer having a first conductivity type, a second layer having a second conductivity type, a third layer having the second conductivity type, one or more first zones having the first conductivity type and located within the second layer, wherein each one of the one or more first zones is adjacent to the third layer, and one or more second zones having the second conductivity type and located within the second layer, wherein each one of the one or more second zones is adjacent to one or more of the one or more first zones.
Public/Granted literature
- US20080283868A1 Semiconductor Device Public/Granted day:2008-11-20
Information query
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