Invention Grant
- Patent Title: Methods and systems to compensate for a stitching disturbance of a printed pattern in a maskless lithography system not utilizing overlap of the exposure zones
- Patent Title (中): 用于补偿不使用曝光区重叠的无掩模光刻系统中印刷图案的缝合干扰的方法和系统
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Application No.: US12178522Application Date: 2008-07-23
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Publication No.: US07688423B2Publication Date: 2010-03-30
- Inventor: Arno Bleeker , Wenceslao A. Cebuhar , Azat M. Latypov
- Applicant: Arno Bleeker , Wenceslao A. Cebuhar , Azat M. Latypov
- Applicant Address: NL Veldhoven
- Assignee: ASML Holding N.V.
- Current Assignee: ASML Holding N.V.
- Current Assignee Address: NL Veldhoven
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- Main IPC: G03B27/42
- IPC: G03B27/42 ; G03B27/68
Abstract:
A method and system are provided for forming a pattern within an area of a photosensitive surface. An exemplary method includes performing a first exposure of the photosensitive surface in accordance with predetermined image data, wherein the first exposure occurs during a first pass and produces a first image within the area. The image data is adjusted to compensate for identified image deficiencies image deficiencies, the image deficiencies being within a region of the first image. A second exposure, of the photosensitive surface, is performed in accordance with the adjusted image data during a second pass.
Public/Granted literature
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