A current sensing data read/verify process and sense amplifier is described that senses memory cells of a non-volatile memory array utilizing a current sensing process that places a current source to provide current to the bit line. The voltage level of the bit line is then set by the current provided by the current source and the current sunk from the bit line through the selected memory cell to the source line, which is dependent on the threshold voltage of its programmed or erased state. If the selected memory cell is erased, current flows through the memory cell to the source line and the bit line voltage falls. If the selected memory cell is programmed, little or no current flows through the cell, and the bit line voltage rises and is sensed by the sense amplifier.