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US07688670B2 Semiconductor device with improved power supply control for a plurality of memory arrays 有权
具有用于多个存储器阵列的改进的电源控制的半导体器件

Semiconductor device with improved power supply control for a plurality of memory arrays
Abstract:
A synchronous DRAM is provided which includes arrangements for operations of power supply circuitry based upon whether the DRAM is in a power down mode or not. In one embodiment, a first power supply circuit and a second power supply circuit are provided which both receive externally supplied voltages and output internal supply voltages. The first power supply circuit is not in operation when a semiconductor device of the synchronous DRAM is in a power down mode. However, the second power supply circuit is continuously in operation during the power down mode. In another arrangement, the operation of a voltage limiter circuit is controlled based on whether or not the DRAM is in a power down mode.
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