Invention Grant
- Patent Title: Strain sensor and a method of making the same
- Patent Title (中): 应变传感器及其制作方法
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Application No.: US11603863Application Date: 2006-11-24
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Publication No.: US07690263B2Publication Date: 2010-04-06
- Inventor: Shien-Uang Jen , Wen-Chih Chen , Yuan-Tsung Chen , Yeong-Der Yao
- Applicant: Shien-Uang Jen , Wen-Chih Chen , Yuan-Tsung Chen , Yeong-Der Yao
- Applicant Address: TW Taipei
- Assignee: Academia Sinica
- Current Assignee: Academia Sinica
- Current Assignee Address: TW Taipei
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, LLP
- Main IPC: G01L1/00
- IPC: G01L1/00

Abstract:
A strain sensor is provided including a substrate, and a sensing layer, including cobalt, provided on the substrate. A first electrode is coupled to the sensing layer, and a tunnel layer including aluminum oxide is provided on the sensing layer. In addition, a pinned layer, also including cobalt, is provided on the tunnel layer. An exchange biasing layer is provided on the pinned layer, and a second electrode is coupled to the exchange biasing layer. The strain sensor is configured such that, over a range of values of strain applied to the sensor, a resistance of the sensor is a linear function of the strain. A related method is also disclosed.
Public/Granted literature
- US20080122572A1 Strain sensor and a method of making the same Public/Granted day:2008-05-29
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