Invention Grant
- Patent Title: Magnesium oxide single crystal and method for producing the same
- Patent Title (中): 氧化镁单晶及其制造方法
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Application No.: US11909505Application Date: 2006-03-24
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Publication No.: US07691200B2Publication Date: 2010-04-06
- Inventor: Atsuo Toutsuka , Yoshifumi Kawaguchi , Masaaki Kunishige
- Applicant: Atsuo Toutsuka , Yoshifumi Kawaguchi , Masaaki Kunishige
- Applicant Address: JP Hyogo
- Assignee: Tateho Chemical Industries Co., Ltd
- Current Assignee: Tateho Chemical Industries Co., Ltd
- Current Assignee Address: JP Hyogo
- Agency: Lucas & Mercanti, LLP
- Priority: JP2005-087967 20050325
- International Application: PCT/JP2006/305926 WO 20060324
- International Announcement: WO2006/104027 WO 20061005
- Main IPC: C30B13/00
- IPC: C30B13/00 ; C30B21/04 ; C30B28/08 ; C21B11/10 ; C21B13/12 ; C01F5/02 ; C01F5/14 ; C04B35/00

Abstract:
Provided is a MgO single crystal for obtaining a magnesium oxide (MgO) single crystal deposition material which is prevented from splashing during the vapor deposition in, e.g., an electron beam deposition method without reducing the deposition rate, and for obtaining a MgO single crystal substrate which can form thereon, e.g., a superconductor thin film having excellent superconducting properties. A MgO single crystal having a calcium content of 150×10−6 to 1,000×10−6 kg/kg and a silicon content of 10×10−6 kg/kg or less, wherein the MgO single crystal has a variation of 30% or less in terms of a CV value in detected amounts of calcium fragment ions, as analyzed by TOF-SIMS with respect to the polished surface of the MgO single crystal. A MgO single crystal deposition material and a MgO single crystal substrate for forming a thin film obtained from the MgO single crystal.
Public/Granted literature
- US20090053131A1 MAGNESIUM OXIDE SINGLE CRYSTAL AND METHOD FOR PRODUCING THE SAME Public/Granted day:2009-02-26
Information query
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