Invention Grant
- Patent Title: Method of forming three-dimensional nanocrystal array
- Patent Title (中): 形成三维纳米晶阵列的方法
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Application No.: US10690688Application Date: 2003-10-21
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Publication No.: US07691201B2Publication Date: 2010-04-06
- Inventor: Theodore I. Kamins , Philip J. Kuekes
- Applicant: Theodore I. Kamins , Philip J. Kuekes
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Main IPC: C30B21/02
- IPC: C30B21/02

Abstract:
A method of forming an assembly of isolated nanowires of at least one material within a matrix of another material is provided. The method comprises: providing a substrate; forming a catalyst array on a major surface of the substrate; growing an array of the nanowires corresponding with the catalyst array, the nanowires, each comprising at least one material; and forming a matrix of another material that fills in spaces between the nanowires. The method is useful for producing a variety of structures useful in a number of devices, such as photonic bandgap structures and quantum dot structures.
Public/Granted literature
- US20040079278A1 Method of forming three-dimensional nanocrystal array Public/Granted day:2004-04-29
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