Invention Grant
- Patent Title: Resist film removing method
- Patent Title (中): 抗蚀膜去除方法
-
Application No.: US11543819Application Date: 2006-10-06
-
Publication No.: US07691210B2Publication Date: 2010-04-06
- Inventor: Takehiko Orii , Kenji Sekiguchi , Tadashi Iino
- Applicant: Takehiko Orii , Kenji Sekiguchi , Tadashi Iino
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Smith, Gambrell & Russell, LLP
- Priority: JP2005-296632 20051011
- Main IPC: B08B3/00
- IPC: B08B3/00
Abstract:
A resist film removing method for removing a resist film disposed on a substrate and having a cured layer at a surface includes covering the surface of the resist film with a protection film; causing popping in the resist film covered with the protection film; denaturing the resist film and the protection film after causing popping, to be soluble in water; and performing purified water cleaning to remove from the substrate the resist film and the protection film denatured to be soluble in water.
Public/Granted literature
- US20070082496A1 Resist film removing method Public/Granted day:2007-04-12
Information query
